1. product profile 1.1 general description a 5 w plastic ldmos power transistor for br oadcast transmitter and ism applications at frequencies from hf to 1400 mhz. 1.2 features and benefits ? easy power control ? integrated dual side esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 1400 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications BLP10H605 broadband ldmos driver transistor rev. 2 ? 18 april 2014 objective data sheet table 1. application performance test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 860 50 5 22.4 59.6
BLP10H605 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. objective data sheet rev. 2 ? 18 april 2014 2 of 11 nxp semiconductors BLP10H605 broadband ldmos driver transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol 1, 3, 4, 6, 7, 9, 10, 12 n.c. 2 gate1 5 gate2 8drain2 11 drain1 13 source [1] 7 u d q v s d u h q w w r s y l h z d d d table 3. ordering information type number package name description version BLP10H605 hvson12 plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 5 ? 6 ? 0.85 mm sot1352-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c
BLP10H605 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. objective data sheet rev. 2 ? 18 april 2014 3 of 11 nxp semiconductors BLP10H605 broadband ldmos driver transistor 5. recommended operating conditions see application note an11520 for more details. 6. thermal characteristics [1] r th(j-c) is measured under rf conditions 7. characteristics fig 1. recommended operating area; case temperature as a function of power dissipation d d d 3 : 7 f d v h f d v h 7 f d v h ? & |